d a t a sh eet discrete semiconductors voltage regulator diodes 1/3 page (datasheet) m3d054 discrete semiconductors bzv55 series smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 7
voltage regulator diodes bzv55 series features total power dissipation: max. 500 mw two tolerance series: 2%, and approx. 5% working voltage range: nom. 2.4 to 75 v (e24 range) non-repetitive peak reverse power dissipation: max. 40 w. applications low voltage stabilizers or voltage references. description low-power voltage regulator diodes in small hermetically sealed glass sod80c smd packages. the diodes are available in the normalized e24 2% (bzv55-b) and approx. 5% (bzv55-c) tolerance range. the series consists of 37 types with nominal working voltages from 2.4 to 75 v. columns mam215 ka fig.1 simplified outline (sod80c) and symbol. the cathode is indicated by a yellow band. limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. device mounted on a ceramic substrate of 10 10 0.6 mm. symbol parameter conditions min. max. unit i f continuous forward current - 250 ma i zsm non-repetitive peak reverse current t p = 100 m s; square wave; t j =25 c prior to surge see tables 1 and 2 a p tot total power dissipation t amb 50 c; note 1 - 400 mw tie-point 50 c; note 1 - 500 mw p zsm non-repetitive peak reverse power dissipation t p = 100 m s; square wave; t j =25 c prior to surge; see fig.3 - 40 w t stg storage temperature - 65 +200 c t j junction temperature - 65 +200 c smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 7
electrical characteristics total bzv55-b and bzv55-c series t j =25 c; unless otherwise speci?ed. symbol parameter conditions max. unit v f forward voltage i f = 10 ma; see fig.4 0.9 v i r reverse current bzv55-b/c2v4 v r =1v 50 m a bzv55-b/c2v7 v r =1v 20 m a bzv55-b/c3v0 v r =1v 10 m a bzv55-b/c3v3 v r =1v 5 m a bzv55-b/c3v6 v r =1v 5 m a bzv55-b/c3v9 v r =1v 3 m a bzv55-b/c4v3 v r =1v 3 m a bzv55-b/c4v7 v r =2v 3 m a bzv55-b/c5v1 v r =2v 2 m a bzv55-b/c5v6 v r =2v 1 m a bzv55-b/c6v2 v r =4v 3 m a bzv55-b/c6v8 v r =4v 2 m a bzv55-b/c7v5 v r =5v 1 m a bzv55-b/c8v2 v r = 5 v 700 na bzv55-b/c9v1 v r = 6 v 500 na bzv55-b/c10 v r = 7 v 200 na bzv55-b/c11 v r = 8 v 100 na bzv55-b/c12 v r = 8 v 100 na bzv55-b/c13 v r = 8 v 100 na bzv55-b/c15 to bzv55-b/c75 v r = 0.7v znom 50 na 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 3 of 7 voltage regulator diodes bzv55 series smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here inthis text is here in table 1 per type, bzv55- b/c2v4 to bzv55- b/c24 t j =25 c unless otherwise speci?ed. bzv55- bxxx cxxx working voltage v z (v) at i ztest =5ma differential resistance r dif ( w ) temp. coeff. s z (mv/k) at i ztest =5ma (see figs 5 and 6) diode cap. c d (pf) at f = 1 mhz; v r =0v non-repetitive peak reverse current i zsm (a) at t p = 100 m s; t amb =25 c tol. 2% (b) tol. approx. 5% (c) at i ztest = 1 ma at i ztest =5ma min. max. min. max. typ. max. typ. max. min. typ. max. max. max. 2v4 2.35 2.45 2.2 2.6 275 600 70 100 - 3.5 - 1.6 0 450 6.0 2v7 2.65 2.75 2.5 2.9 300 600 75 100 - 3.5 - 2.0 0 450 6.0 3v0 2.94 3.06 2.8 3.2 325 600 80 95 - 3.5 - 2.1 0 450 6.0 3v3 3.23 3.37 3.1 3.5 350 600 85 95 - 3.5 - 2.4 0 450 6.0 3v6 3.53 3.67 3.4 3.8 375 600 85 90 - 3.5 - 2.4 0 450 6.0 3v9 3.82 3.98 3.7 4.1 400 600 85 90 - 3.5 - 2.5 0 450 6.0 4v3 4.21 4.39 4.0 4.6 410 600 80 90 - 3.5 - 2.5 0 450 6.0 4v7 4.61 4.79 4.4 5.0 425 500 50 80 - 3.5 - 1.4 0.2 300 6.0 5v1 5.00 5.20 4.8 5.4 400 480 40 60 - 2.7 - 0.8 1.2 300 6.0 5v6 5.49 5.71 5.2 6.0 80 400 15 40 - 2.0 1.2 2.5 300 6.0 6v2 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0 6v8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0 7v5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0 8v2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0 9v1 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0 10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0 11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5 12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5 15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0 16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5 18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5 20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60 1.5 22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25 24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55 1.25 voltage regulator diodes bzv55 series smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 4 of 7
this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force landscape pages to be ... table 2 per type, bzv55- b/c27 to bzv55- b/c75 t j =25 c unless otherwise speci?ed. bzv55- bxxx cxxx working voltage v z (v) at i ztest =2ma differential resistance r dif ( w ) temp. coeff. s z (mv/k) at i ztest =2ma (see figs 5 and 6) diode cap. c d (pf) at f = 1 mhz; v r =0v non-repetitive peak reverse current i zsm (a) at t p = 100 m s; t amb =25 c tol. 2% (b) tol. approx. 5% (c) at i ztest = 0.5 ma at i ztest =2ma min. max. min. max. typ. max. typ. max. min. typ. max. max. max. 27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0 30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0 33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9 36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8 39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7 43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6 47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5 51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4 56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3 62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2 product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 5 of 7 voltage regulator diodes bzv55 series
thermal characteristics note 1. device mounted on a ceramic substrate of 10 10 0.6 mm. symbol parameter conditions value unit r th j-tp thermal resistance from junction to tie-point 300 k/w r th j-a thermal resistance from junction to ambient see fig.2 and note 1 380 k/w graphical data handbook, full pagewidth 10 - 1 11010 2 10 3 10 4 10 5 mbg930 10 2 10 1 10 3 t p (ms) t p t p t t d = 0.02 0.01 0.001 0.75 0.50 0.33 0.20 0.10 0.05 d = 1 r th j-a (k/w) fig.2 thermal resistance from junction to ambient as a function of pulse duration. this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader product specification voltage regulator diodes bzv55 series 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 6 of 7
fig.3 maximum permissible non-repetitive peak reverse power dissipation versus duration. handbook, halfpage mbg801 10 3 1 duration (ms) p zsm (w) 10 10 2 10 - 1 10 1 (1) (2) (1) t j =25 c (prior to surge). (2) t j = 150 c (prior to surge). fig.4 typical forward current as a function of forward voltage. handbook, halfpage 0.6 1.0 300 100 0 200 mbg781 0.8 v f (v) i f (ma) t j =25 c. fig.5 temperature coefficient as a function of working current; typical values. handbook, halfpage 060 0 - 2 - 3 - 1 mbg783 20 40 i z (ma) s z (mv/k) 4v3 3v9 3v6 3v0 2v4 2v7 3v3 bzv55-b/c2v4 to bzv55-b/c4v3. t j =25to150 c. fig.6 temperature coefficient as a function of working current; typical values. handbook, halfpage 020 16 10 0 - 5 5 mbg782 4812 i z (ma) s z (mv/k) 4v7 12 11 10 9v1 8v2 7v5 6v8 6v2 5v6 5v1 bzv55-b/c4v7 to bzv55-b/c12. t j =25to150 c. 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 7 of 7 product specification voltage regulator diodes bzv55 series
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